BPV23NF

Package / Case :
Product : PIN Photodiodes
Reverse Voltage : 60 V
Maximum Dark Current : 30 nA
Half Intensity Angle Degrees : 60 deg
Peak Wavelength : 940 nm
Rise Time : 70 ns
Fall Time : 70 ns


Features:

` Large radiant sensitive area (A = 5.7 mm2)
` Wide viewing angle = ± 60 °
` Improved sensitivity
` Fast response times
` Low junction capacitance
` Plastic package with universal IR filter
` Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL




Application

Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU., TSI., or TSH.Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	60	V
Power Dissipation	Tamb 25	PV	215	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	55...+100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

Silicon PIN Photodiode, RoHS Compliant

BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens.

The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR emitters (p = 950 nm, srel(= 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle.

In comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80%.

Parameters:

Technical/Catalog Information	BPV23NF
Vendor	Vishay/Semiconductors
Category	Sensors, Transducers
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BPV23NF BPV23NF 751 1009 ND 7511009ND 751-1009