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BS616LV2016

Features: • WideVccoperation voltage : 2.4V ~ 5.5V• Very low power consumption : Vcc= 3.0V C-grade: 29mA (@55ns) operating current I -grade:30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade:25mA (@70ns) operating current 0.3uA(Typ.)CMOSstandbycurrent Vcc...

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SeekIC No. : 004301819 Detail

BS616LV2016: Features: • WideVccoperation voltage : 2.4V ~ 5.5V• Very low power consumption : Vcc= 3.0V C-grade: 29mA (@55ns) operating current I -grade:30mA (@55ns) operating current C-grade: 24mA ...

BS616LV2016 Data Sheet

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Part Number:
BS616LV2016
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• WideVccoperation voltage : 2.4V ~ 5.5V
• Very low power consumption :     
   Vcc= 3.0V   C-grade: 29mA (@55ns) operating current
                      I -grade:30mA (@55ns) operating current
                     C-grade: 24mA (@70ns) operating current
                      I -grade:25mA (@70ns) operating current
                      0.3uA(Typ.)CMOSstandbycurrent
  Vcc= 5.0V    C-grade: 60mA (@55ns) operating current
                      I -grade:62mA (@55ns) operating current
                     C-grade: 53mA (@70ns) operating current
                      I -grade:55mA (@70ns) operating current
                      1.0uA(Typ.)CMOSstandbycurrent
• High speed access time :
             -55          55ns
             -70          70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER RATING UNITS
VTERM Terminal Voltage with
Respect to GND		 -0.5 to
Vcc+0.5		 V
TBIAS Temperature Under Bias -40 to +85
TSTG Storage Temperature -60 to +150
PT Power Dissipation 1.0 W
IOUT DC Output Current 20 mA



Description

The BS616LV2016 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits  and
operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616LV2016 provide both highspeed and low power features with atypical  CMOS  standby current  of 0.3uA at 3.0V/25oC and maximum access time of  55ns at 3.0V/85oC.

Easy  memory  expansion  is provided by active  LOW  chip enable(CE ), active LOW  output enable(OE ) and three-state output drivers.

The BS616LV2016 has an  automatic  power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV2016  is  available in  DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package.




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