Packaging
:
Product
: IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
: 1200 V
Maximum Operating Temperature
: + 125 C
Collector-Emitter Saturation Voltage
: 2.1 V
Configuration
: Dual
Gate-Emitter Leakage Current
: 400 nA
Power Dissipation
: 1.25 KW
Package / Case
: 62MM
Continuous Collector Current at 25 C
: 300 A
DescriptionFirstly,some electrical specifications about BSM150GB120DLC will be given to you.Kollektor-Emitter-Sperrspannung collector-emitter voltage(VCES) is 1200 V.Kollektor-Dauergleichstrom (TC = 80 °C IC) is nom. 150 A.DC-collector current(TC = 25 °C ,IC) is 300 A.Periodischer Kollektor Spitzenstrom repetitive peak collector current(tP = 1 ms, TC = 80°C, ICRM) is 300 A.Gesamt-Verlustleistung total power dissipation(TC=25°C, Transistor Ptot) is 1.2 kW.Gate-Emitter-Spitzenspannung gate-emitter peak voltage (VGES) is +/- 20V V.Dauergleichstrom DC forward current(IF) is 150 A.Periodischer Spitzenstrom repetitive peak forw. current(tP = 1 ms, IFRM) is 300 A.
Secondly,there are some charactersitics of BSM150GB120DLC values about it.Gate-Schwellenspannung gate threshold voltage(IC = 6mA, VCE = VGE, Tvj = 25°C, VGE(th)) is 4.5 V min, 5.5 V typ and 6.5 V max.Eingangskapazität input capacitance(f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V, Cies) is 11 nF typ.Kollektor-Emitter Reststrom (VCE = 1200V, VGE = 0V, Tvj = 25°C, ICES) is 0.01 mA typ and 0.5 mA max.collector-emitter cut-off current(VCE = 1200V, VGE = 0V, Tvj = 125°C) is 0.5 mA typ.Gate-Emitter Reststrom gate-emitter leakage current(VCE = 0V, VGE = 20V, Tvj = 25°C, IGES) is 400 nA max.
At last, BSM150GB120DLC is just the simple introduction to it, if you want to know more detailed information about it,please pay more attention to our web!
BSM150GB120DLC Data Sheet
