BSM150GB170DN2 E3166 suppliers, BSM150GB170DN2 E3166 price trend, BSM150GB170DN2 E3166 PDF download, circuit diagram from SeekIC

Position: Home > Datasheet list > BSM Series > Index B > BSM150GB170DN2 E3166

Purchase BSM150GB170DN2 E3166, In-stock BSM150GB170DN2 E3166 From SeekIC.

Five Points

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1700	V
Collector-gate voltage, R_GS= 20 k	V_CGR	1700
Gate-source voltage	V _GE	± 20
DC collector current T_C= 25 °C T_C= 80 °C	I_c	220 150	A
Pulsed collector current, t_p= 1 ms T_C = 25 °C T_C = 80 °C	Ic_puls	440 300	A
Power dissipation, T_C= 25 °C	P_tot	1250	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• R _{G on,min} = 10 Ohm

BSM100GAL120DN2
PDF/DataSheet Download

·BSM100GB120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
135361 KB
·BSM100GB120DN2K
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
116795 KB
·BSM100GB170DLC
IGBT Module
83313 KB
·BSM100GB170DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
134096 KB
·BSM100GD120DLC
EUPEC [eupec GmbH]
IGBT-Module
88027 KB
·BSM100GD120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
189665 KB
·BSM100GP60
EUPEC [eupec GmbH]
Hochstzulassige Werte / Maximum rated values
217048 KB
·BSM100GT120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate)
184470 KB

BSM150GB170DN2
BSM150GB120DN2E3166
BSM150GB120DN2
The BSM150GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 150 A (Tc=80 °C) or 210 A (Tc=25 °C);(3)Power dissipation per IGBT: 1250 W;(4)Chip te...
BSM150GB120DLC
Firstly,some electrical specifications about BSM150GB120DLC will be given to you.Kollektor-Emitter-Sperrspannung collector-emitter voltage(VCES) is 1200 V.Kollektor-Dauergleichstrom (TC = 80 °C IC) is nom. 150 A.DC-collector current(TC = 25 °C ,IC) is 300 A....
BSM150GAL120DN2E3166
BSM150GAL120DN2

X0405MF
Price: 0.12-1 USD
gate current, TO202-3, 1.2 A
SD1488
Price: 12-13.5 USD
NPN planar transistor, 8A, 16V, 5.8dB, 117W, SMD, SD1488, STMicroelectronics
PSD813F1A-90JI
Price: 52-55 USD
MCU, PLCC, 5V
AD6645ASQZ-105
Price: 0.01-100 USD
14-bit, analog-to-digital converter, QFP52, 0 to 7 V, 25 mA, 100 dB
MC13213
Price: 2.5-3 USD
2.4GHZ, 60K, 71LGA, ZigBee platform, Transceiver, -0.3 to 3.6 V, 120 mA
MC68LC302PU20CT
Price: 1-2 USD
Low Power, Integrated Multiprotocol Processor, - 0.3 to + 7.0 V, 1152-Byte, MC68LC302PU20CT
PIC12F629-I/SN
Price: 0.43-0.45 USD
8-Bit CMOS Microcontroller, SOP-8PIN, -0.3 to +6.5V, 250 mA, Wide Operating Voltage Range
DAC709KH
Price: 80-90 USD
DAC709KH - Microprocessor-Compatible 16-BIT DIGITAL-TO-ANALOG CONVERTERS - Burr-Brown Corporation
ADE7758ARWZ
Price: 4-4.5 USD
3-phase, electrical energy measurement IC, SOP24, a serial interface, two pulse outputs
u2531b
Price: 0.5-1.2 USD
Monolithic Integrated Circuit, dip8, -0.3 to 14V, 10mA, 180mW
M25PE80-VMW6TG
Price: 0.58-0.6 USD
8 Mbit, Page-Erasable Serial Flash memory, SO8W
VT8237R
Price: 4.8-6 USD
South Bridge, high compatibility, BGA, 0 to 5.5V, low power CMOS process

Map list: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 All