BSM150GT120DN2

IGBT Modules 1200V 150A TRIPACK

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SeekIC No. : 00141374 Detail

BSM150GT120DN2: IGBT Modules 1200V 150A TRIPACK

floor Price/Ceiling Price

US $ 139.67~155.2 / Piece | Get Latest Price
Part Number:
BSM150GT120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $155.2
  • $139.67
  • Processing time
  • 15 Days
  • 15 Days
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Upload time: 2024/3/27

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 200 A Gate-Emitter Leakage Current : 320 nA
Power Dissipation : 1.25 KW Maximum Operating Temperature : + 150 C
Package / Case : EconoPACK 3A    

Description

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Package / Case : EconoPACK 3A
Power Dissipation : 1.25 KW
Continuous Collector Current at 25 C : 200 A


Features:

• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate





Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
200
150
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
400
300
Power dissipation, TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150





Description

The BSM150GT120DN2 has four features.(1)solderable power module.(2)3-phase full-bridge.(3)including fast free-wheel diodes.(4)package with insulated metal base plate.

The BSM150GT120DN2 has some maximum ratings.(1)the parameter is collector-emitter voltage,the symbol is VCE,the values of BSM150GT120DN2 is 1200,the unit is V.(2)the parameter is collector-gate voltage RGE = 20 k,the symbol is VCGR,the values is 1200,the unit is V.(3)the parameter is gate-emitter voltage,the symbol is VGE,the values is ±20,the unit is V.(4)the parameter is DC collector current TC = 25 ,the symbol is IC,the values is 200,the unit is A.(5)the parameter is DC collector current TC = 80 ,the symbol is IC,the values is 150,the unit is A.(6)the parameter is pulsed collector current, tp = 1 ms TC = 25 ,the symbol is ICpuls,the values is 400,the unit is A.(7)the parameter is pulsed collector current, tp = 1 ms TC = 80 ,the symbol is ICpuls,the values is 300,the unit is A.(8)the parameter is power dissipation per IGBT TC = 25 ,the symbol is Ptot,the values is 1250,the unit is W.(9)the parameter is chip temperature,the symbol is Tj,the values is +150,the unit is .(10)the parameter is storage temperature,the symbol is Tstg,the values is -55 to +150,the unit is .(11)the parameter is thermal resistance, chip case,the symbol is RthJC,the values is 0.12,the unit is k/W.(12)the parameter is diode thermal resistance, chip case,the symbol is RthJCD,the values is 0.28,the unit is k/W.(13)the parameter is insulation test voltage, t = 1min,the symbol is Vis,the values is 2500,the unit is Vac.






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