Purchase BSM150GT120DN2, In-stock BSM150GT120DN2 From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+
- Table of contents:
BSM150GT120DN2
-
Suppliers
DataSheet
General Description
BSM150GT120DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
200
150 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
400
300 | |
|
Power dissipation, TC = 25 °C |
Ptot |
1250 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM150GT120DN2 Features
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
BSM150GT120DN2
PDF/DataSheet Download
- Datasheet: BSM150GT120DN2
- File Size: 186377 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BSM100GAL120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
- 83162 KB
- ·BSM100GB120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 135361 KB
- ·BSM100GB120DN2K
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 116795 KB
- ·BSM100GB170DLC
- IGBT Module
- 83313 KB
- ·BSM100GB170DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 134096 KB
- ·BSM100GD120DLC
- EUPEC [eupec GmbH]
- IGBT-Module
- 88027 KB
- ·BSM100GD120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
- 189665 KB
- ·BSM100GP60
- EUPEC [eupec GmbH]
- Hochstzulassige Werte / Maximum rated values
- 217048 KB
BSM150GT120DN2 Relative Products
BSM150GB170DN2 E3166
BSM150GB170DN2
BSM150GB120DN2E3166
BSM150GB120DN2
The BSM150GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 150 A (Tc=80 °C) or 210 A (Tc=25 °C);(3)Power dissipation per IGBT: 1250 W;(4)Chip te...
BSM150GB120DLC
Firstly,some electrical specifications about BSM150GB120DLC will be given to you.Kollektor-Emitter-Sperrspannung collector-emitter voltage(VCES) is 1200 V.Kollektor-Dauergleichstrom (TC = 80 °C IC) is nom. 150 A.DC-collector current(TC = 25 °C ,IC) is 300 A....
BSM150GAL120DN2E3166
Hotspot Suppliers Product
INA122UA
Price: 2.38-2.93 USD
micropower instrumentation amplifier, single supply, 8SOIC, 120kHz, 150μV, 30mA
MC33262DR2G
Price: 0.462-0.556 USD
power factor controller, Pb-Free, Zero Current Detector
GF-G07200-N-A3
Price: 40-45 USD
GF-G07200-N-A3, BGA, NVIDIA Corporation
SR240
Price: 0.0162-0.018 USD
2.0A schottky barrier rectifier, 40 V, DO15, SR240, Toshiba
STM32F107VCT6
Price: 4.52-4.85 USD
ARM-based 32-bit MCU, 100-LQFP, 72MHz, 2 V ~ 3.6 V, 256KB
KCS057QV1AJ-G39
Price: 0.1-1 USD
KCS057QV1AJ-G39, Kyocera LCD
SN74LVT240ANSR
Price: 1-4 USD
octal buffer, line driver, SOP20, -0.5 V to 4.6 V, TTL interface
BAV70WT1
Price: 0.001-5 USD
Dual Switching Diode, Common Cathode, SOT323, BAV70WT1, ON Semiconductor
K9F5608UOD-PCBO
Price: 1.45-1.95 USD
NAND Flash Memory, TSOP-48, -0.6 to + 2.45 V, 5 mA, 16M x 16 Bit, spare 8M bit capacity
G5V-2
Price: 0.66-0.72 USD
G5V-2 PCB Relay
CY62256VLL-70ZRI
Price: 5-6 USD
CY62256VLL-70ZRI - 32K x 8 Static RAM - Cypress Semiconductor
19P-1.25FJ
Price: 0.6-1.2 USD
1.25mm, connector, board-to-board, 0.5A
