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MFG:module Package Cooled:INFINEON D/C:05+
Part Number: BSM50GD120DN2E3226
MFG: module
Package Cooled: INFINEON
D/C: 05+
- Table of contents:
BSM50GD120DN2E3226
-
Suppliers
DataSheet
General Description
BSM50GD120DN2E3226 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
50
45
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
100
90 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
350 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM50GD120DN2E3226 Features
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
BSM50GD120DN2E3226
PDF/DataSheet Download
- Datasheet: BSM50GD120DN2E3226
- File Size: 135922 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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