Purchase BSM50GD60DN2, In-stock BSM50GD60DN2 From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+
- Table of contents:
BSM50GD60DN2
-
Suppliers
DataSheet
General Description
BSM50GD60DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
600 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
50
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
100
| |
|
Power dissipation,per IGBT TC = 25 °C |
Ptot |
200 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM50GD60DN2 Features
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
BSM50GD60DN2
PDF/DataSheet Download
- Datasheet: BSM50GD60DN2
- File Size: 126836 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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BSM50GB120DN2 is a type of IGBT power module which has three unique features: The first one is half-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base plate. There are some maximum ratings about B...
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