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Part Number: BSM50GP120

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Description: The BSM50GP120 is a kind of IGBT-module and has some electrical properties as follows. (1): repetitive peak reverse volta...


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BSM50GP120 General Description


The BSM50GP120 is a kind of IGBT-module and has some electrical properties as follows. (1): repetitive peak reverse voltage (VRRM) is 1600 V; (2): RMS forward current per chip is 40 A; (3): DC forward current (ID) is 50 A at TC is 80 ; (4): surge forward current (IFSM) is 500 A at tP is 10 ms, Tvj is 25 and is 400 A at tP is 10 ms,Tvj is 150 ; (5): collector-emitter voltage (VCES) is 1200 V; (6): DC-collector current is 50 A at TC is 80 and is 80 A at TC is 25 ; (7): total power dissipation is 360 W at TC is 25 ; (8): the typical rise time is 45 ns when VGE is ±15 V and Tvj is 25 , the typical fall time is 10 ns at VGE is ±15 V and Tvj is 25 .

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BSM50GP120 datasheet

BSM100GAL120DN2
PDF/DataSheet Download

  • Datasheet: BSM100GAL120DN2
  • File Size: 83162 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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