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Part Number: BSM50GX120DN2

 

 

 

 

Description: The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package ...


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BSM50GX120DN2 General Description


The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.

The absolute maximum ratings of the BSM50GX120DN2 can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage (RGE=20 k): 1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current (Tc=25°C):78 A;(5)DC collector current (Tc=80°C):50 A;(6)pulsed collector current, tp=1 ms (Tc=25°C):156 A;(7)pulsed collector current, tp=1 ms (Tc=80°C):100 A;(8)power dissipation per IGBT (Tc=25°C):400 W;(9)chip temperature:+150°C;(10)storage temperature:-55 to +150°C. If you want to know more information such as the electrical characteristics about the BSM50GX120DN2, please download the datasheet in www.seekic.com or www.chinaicmart.com .

BSM50GX120DN2 datasheet

BSM100GAL120DN2
PDF/DataSheet Download

  • Datasheet: BSM100GAL120DN2
  • File Size: 83162 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

Find BSM50GX120DN2 Suppliers

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