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MFG:SIEMENS D/C:1IGBT&1DIO: 75A1200V

Five Points

MFG: SIEMENS

D/C: 1IGBT&1DIO: 75A1200V

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage, R_GS= 20 k	V_CGR	1200
Gate-source voltage	V _GE	± 20
DC collector current T_C= 25 °C T_C= 80 °C	I_c	105 75	A
Pulsed collector current, t_p= 1 ms T_C = 25 °C T_C = 80 °C	Ic_puls	210 150	A
Power dissipation, T_C= 25 °C	P_tot	625	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate

BSM75GAL120DN2
PDF/DataSheet Download

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