BSM75GB120DN2

IGBT Modules 1200V 75A DUAL

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SeekIC No. : 00141508 Detail

BSM75GB120DN2: IGBT Modules 1200V 75A DUAL

floor Price/Ceiling Price

US $ 41.02~45.58 / Piece | Get Latest Price
Part Number:
BSM75GB120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $45.58
  • $41.02
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/21

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Half Bridge Module
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 105 A Gate-Emitter Leakage Current : 320 nA
Power Dissipation : 625 W Maximum Operating Temperature : + 150 C
Package / Case : Half Bridge1    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Configuration : Half Bridge Module
Package / Case : Half Bridge1
Continuous Collector Current at 25 C : 105 A
Power Dissipation : 625 W


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
105
75
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
210
150
Power dissipation per IGBT
TC = 25 °C
Ptot
625
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-40 ... + 125



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