BSO203SP

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.021 Ohms


Features:

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	-9 -7.2		A
Pulsed drain current TA=25°C	I Dpulse	-36
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	97		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6		kV/s
Gate source voltage	VGS	±12		V
Power dissipation TA=25°C	Ptot	2.35		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO203SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	21 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds	2265pF @ 15V
Power - Max	2.35W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	50.4nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO203SP BSO203SP BSO203SPINCT ND BSO203SPINCTND BSO203SPINCT