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BSO203SP

MOSFET P-CH -20 V -8.2 A

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SeekIC No. : 00158627 Detail

BSO203SP: MOSFET P-CH -20 V -8.2 A

BSO203SP Data Sheet

floor Price/Ceiling Price

US $ .26~.33 / Piece | Get Latest Price
Part Number:
BSO203SP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1520
  • 1520~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.33
  • $.28
  • $.27
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.021 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.021 Ohms


Features:

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter
Symbol
Values
Unit
Continuous drain current
TA=25°C
TA=70°C
ID

-9
-7.2
A
Pulsed drain current
TA=25°C
I Dpulse

-36

Avalanche energy, single pulse
ID=12.7 A , VDD=25V, RGS=25
EAS
97
mJ
Reverse diode dv/dt
IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C
dv/dt
-6
kV/s
Gate source voltage
VGS
±12
V

Power dissipation
TA=25°C

Ptot

2.35

W

Operating and storage temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56




Parameters:

Technical/Catalog InformationBSO203SP
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs21 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds 2265pF @ 15V
Power - Max2.35W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs50.4nC @ 4.5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSO203SP
BSO203SP
BSO203SPINCT ND
BSO203SPINCTND
BSO203SPINCT



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