BSO211P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.7 A
Package / Case : DSO-8
Resistance Drain-Source RDS (on) : 0.067 Ohms


Features:

• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	-4.7 -3.8		A
Pulsed drain current TA=25°C	I Dpulse	-18.8
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	28		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6		kV/s
Gate source voltage	VGS	±12		V
Power dissipation TA=25°C	Ptot	2		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO211P
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.7A
Rds On (Max) @ Id, Vgs	67 mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) @ Vds	920pF @ 15V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23.9nC @ 4.5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO211P BSO211P BSO211PINTR ND BSO211PINTRND BSO211PINTR