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BSO350N03

MOSFET N-CH 30V 5A

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BSO350N03: MOSFET N-CH 30V 5A

BSO350N03 Data Sheet

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Part Number:
BSO350N03
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 35 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : 5 A
Package / Case : DSO-8


Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• Dual n-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated


Specifications

Parameter
Symbol
Conditions
Values
Unit
10 secs
steady state
Continuous drain current
ID
TA=25 °C1)

6

5
A
TA=70 °C1)

4.8

4

Pulsed drain current, one channel active
I Dpulse
TA=25 °C2)

24
A
Avalanche energy, single pulse
EAS
I D=-9.1 A, RGS=25
8
mJ
Reverse diode dv/dt
dv/dt
ID=-9.1 A, VDS=20 V,
di /dt =-200 A/s,
T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V

Power dissipation

Ptot
TA=25 °C1)

2.0
1.4

W

Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56

°C




Parameters:

Technical/Catalog InformationBSO350N03
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs35 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 15V
Power - Max1.4W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3.7nC @ 5V
Package / CaseDSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSO350N03
BSO350N03
BSO350N03INCT ND
BSO350N03INCTND
BSO350N03INCT



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