Purchase BSO350N03, In-stock BSO350N03 From SeekIC.
MFG:INFINEON Package Cooled:SOP8 D/C:08+
- Table of contents:
BSO350N03
-
Suppliers
DataSheet
General Description
BSO350N03 Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Values |
Unit | |
|
10 secs |
steady state | ||||
|
Continuous drain current |
ID |
TA=25 °C1) |
6 |
5 |
A |
|
TA=70 °C1) |
4.8 |
4 | |||
|
Pulsed drain current, one channel active |
I Dpulse |
TA=25 °C2) |
24 |
A | |
|
Avalanche energy, single pulse |
EAS |
I D=-9.1 A, RGS=25 |
8 |
mJ | |
|
Reverse diode dv/dt |
dv/dt |
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C |
6 |
kV/s | |
|
Gate source voltage |
VGS |
±25 |
V | ||
|
Power dissipation |
Ptot |
TA=25 °C1) |
2.0 |
1.4 |
W |
|
Operating temperature |
T j , T stg |
-55 ... +150 |
°C | ||
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C | |||
BSO350N03 Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• Dual n-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• Dual n-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated
BSO350N03
PDF/DataSheet Download
- Datasheet: BSO350N03
- File Size: 230752 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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