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BST86

Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 180 V Drain-source voltage (non-repetitive peak; tp 2 ms) VDS(SM) max. 200 V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current...

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SeekIC No. : 004302452 Detail

BST86: Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownSpecifications Drain-source voltage VDS max. 180 V Drain-source voltage (non-repetitive peak; tp ...

BST86 Data Sheet

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Part Number:
BST86
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown


Specifications

Drain-source voltage VDS max. 180 V
Drain-source voltage (non-repetitive peak; tp 2 ms) VDS(SM) max. 200 V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) ID max. 300 mA
Drain current (peak) IDM max. 800 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W
Note
1. Transistor mounted on a ceramic substrate of 2.5 cm2 and thickness of 0.7 mm.


Description

N-channel enhancement mode vertical D-MOS transistor BST86 in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers.




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