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MFG:PHI  Package Cooled:SOT89  D/C:08+  

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Part Number: BST86

 

MFG: PHI

Package Cooled: SOT89

D/C: 08+

Description: N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface...


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BST86 General Description


N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers.

BST86 Maximum Ratings

Drain-source voltage VDS max. 180 V
Drain-source voltage (non-repetitive peak; tp 2 ms) VDS(SM) max. 200 V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) ID max. 300 mA
Drain current (peak) IDM max. 800 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W
Note
1. Transistor mounted on a ceramic substrate of 2.5 cm2 and thickness of 0.7 mm.

BST86 Features

· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown

BST86 datasheet

BST86
PDF/DataSheet Download

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Related Part Number

BST86 Relative Products

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