Type: High Side
Input Type: Non-Inverting
Number of Outputs: 1
Mounting Type: Through Hole
Packaging: Tube
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 90A
Manufacturer: Infineon Technologies
Series: PROFET®
Supplier Device Package: P-TO220-7
Package / Case: TO-220-7 Formed Leads
On-State Resistance: 7.2 mOhm
Current - Output / Channel: 44A
Voltage - Supply: 5 V ~ 58 V
Features: * Overload protection
* Current limitation
* Short circuit protection
* Over temperature protection
* Over voltage protection (including load dump)
* Clamp of negative voltage at output
* Fast deenergizing of inductive loads )
* Low ohmic inverse current operation
* Diagnostic feedback with load current sense
* Open load detection via current sense
* Loss of Vbb protection )
* Electrostatic discharge (ESD) protection Application* Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads
* Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
* Replaces electromechanical relays, fuses and discrete circuits Pinout
Specifications
| Parameter |
Symbol |
Values |
Unit |
| Supply voltage (over voltage protection see page 4) |
Vbb |
62 |
V |
Supply voltage for full short circuit protection,
(E limitation see diagram on page 10)
AS Tj,start =-40 ...+150°C: |
Vbb |
58 |
V |
| Load current (short circuit current, see page 5) |
IL |
self-limited |
A |
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
5) RIIN = 2 , RLIS = 0.23 ?, td = 200 ms, = open or grounded |
VLoad dump6 |
80 |
V |
Operating temperature range
Storage temperature range |
Tj
Tstg |
-40 ...+150
-55 ...+150 |
°C |
| Power dissipation (DC), TC 25 °C |
Ptot |
170 |
W |
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, T j = 150°C, Tstart = 150°C const.,
IL = 20 A, ZL = 6 mH, 0 , see diagrams on page 10
|
EAS |
1.2 |
J |
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k |
VESD |
4.0 |
kV |
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8 |
IIN
IIS |
+15 , -250
+15 , -250 |
mA |
DescriptionN channel vertical power FET BTS660Pwith charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Parameters: | Technical/Catalog Information | BTS660P |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-7 (Bent and Staggered Leads) |
| Mounting Type | Through Hole |
| Type | High Side |
| Voltage - Supply | 5 V ~ 58 V |
| On-State Resistance | 7.2 mOhm |
| Current - Output / Channel | 44A |
| Current - Peak Output | 90A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BTS660P
BTS660P
BTS660PIN ND
BTS660PINND
BTS660PIN
|
BTS660P Data Sheet
