BTS660P General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
BTS660P Features
* Overload protection
* Current limitation
* Short circuit protection
* Over temperature protection
* Over voltage protection (including load dump)
* Clamp of negative voltage at output
* Fast deenergizing of inductive loads )
* Low ohmic inverse current operation
* Diagnostic feedback with load current sense
* Open load detection via current sense
* Loss of Vbb protection )
* Electrostatic discharge (ESD) protection
BTS660P Typical Application
* Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads
* Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
* Replaces electromechanical relays, fuses and discrete circuits
BTS660P Connection Diagram
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