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BTS770G
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MFG:700 Package Cooled:Infineon

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Part Number: BTS770G

MFG: 700

Package Cooled: Infineon

Description: The BTS 770 G is a TrilithIC contains one double high-side switch and two low-side switches in one P...

BTS770G General Description

The BTS 770 G is a TrilithIC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. "Silicon instead of heatsink" becomes true

The ultra low R_DSON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency.

The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis. (The comparable standard high-side product is the BTS 611L1.)

For minimized R_DSON the two low-side switches are produced in the SIEMENS Millifet logic level technology (The comparable standard product is the BUZ 101AL).

Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors are connected to separate pins.

So the BTS 770 G can be used in H-Bridge configuration as well as in any other switch configuration.

Moreover, it is possible to add current sense resistors.

All these features open a broad range of automotive and industrial applications.

BTS770G Maximum Ratings

Parameter	Symbol	Limit Values		Unit	Remarks
Parameter	Symbol	min.	max.	Unit	Remarks
High-Side-Switches (Pins DHVS, GH1,2 and SH1,2)
Supply voltage	V_S	0.3	43	V
HS-drain current	I_DHS	8	*	A	* internally limited
HS-input current	I_GH	2	2	mA	Pin GH1 and GH2
HS-input voltage	V_GH	10	16	V	Pin GH1 and GH2
Status Output ST
Status Output current	I_ST	5	5	mA	Pin ST
Low-Side-Switches (Pins DL1,2, GL1,2 and SL1,2)
Break-down voltage	V_(BR)DSS	50		V	V_GS = 0 V; I_D <= 1 mA
LS-drain current	I_DLS		10	A
LS-drain current	I_DLS		20	A	t < 1 ms; n < 0.1
LS-drain current	I_DLS		30	A	t < 0.1 ms; n < 0.1
lS-input voltage	V_GL	10	14	V	Pin GL1 and GL2
Temperatures
Junction temperature	T_j	40	150	°C
Storage temperature	T_stg	50	150	°C
Thermal Resistances (one HS-LS-Path active)
LS-junction case	R_thjCLS		20	K/W	measured to pin3 or 12
HS-junction case	R_thjCHS		20	K/W	measured to pin19
Junction ambient	R_thja		60	K/W

Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.

BTS770G Features

• Quad switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Ultra low R_DSON @ 25 °C:
High-side switch: typ.165 m,
Low-side switch: typ. 55 m
• Very high peak current capability
• Very low quiescent current
• Space- and thermal optimized power P-DSO-Package
• Load and GND-short-circuit-protected
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Short-circuit detection and diagnosis
• Open-load detection and diagnosis
• C-MOS compatible inputs
• Internal clamp diodes
• Isolated sources for external current sensing
• Over- and under-voltage detection with hysteresis

BTS770G Connection Diagram

BTS770G datasheet

BTS770G
PDF/DataSheet Download

Datasheet: BTS770G
File Size: 95731 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Click here to Download

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