Purchase BU508F, In-stock BU508F From SeekIC.
- Table of contents:
BU508F
-
Suppliers
DataSheet
General Description
BU508F Maximum Ratings
| DESCRIPTION |
SYMBOL |
VALUE |
UNIT |
| Collector -Emitter Voltage |
VCES |
1500 |
V |
| Collector -Emitter Voltage |
VCEO |
700 |
V |
| Emitter Base Voltage |
VEBO |
5 |
V |
| Collector Current Collector Peak Current |
IC |
8 |
A |
| Total Power Dissipation upto Ta=25 Tc=25 |
Ptot |
34 |
W |
| Storage Temperature Range Max Operating Junction Temperature |
Tstg |
- 65 to +150 |
|
BU508F
PDF/DataSheet Download
- Datasheet: BU508F
- File Size: 41605 KB
- Manufacturer: CDIL [Continental Device India Limited]
- Click here to Download
- ·BU500
- MOTOROLA [Motorola, Inc]
- NPN SILICON POWER METAL TRANSISTOR
- 55598 KB
- ·BU505
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 63195 KB
- ·BU505D
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 76391 KB
- ·BU505DF
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 83053 KB
- ·BU505F
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 83053 KB
- ·BU506
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 79247 KB
- ·BU506D
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 79247 KB
- ·BU506DF
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 85179 KB
BU508F Relative Products
BU508DX
High voltage, high-speed switching npn transistors BU508DX in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
BU508DW
High voltage, high-speed switching npn transistors BU508DWin a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
BU508DFI
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.
BU508DF
BU508D
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.
BU508AX
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
Hotspot Suppliers Product
BSS84
Price: 0.02-0.05 USD
Low On-Resistance, -50V, transistor
A1695
Price: 0.1-12.5 USD
Silicon PNP Epitaxial Planar Transistor, TO-3, Sanken electric, A1695, -140V, 100W
GF-GO7200-B-N-A3
Price: 21.08-21.72 USD
graphics processing unit, NVIDIA Corporation, Integrated Circuits, BGA, GF-GO7200-B-N-A3
BGA622
Price: 0.2-5 USD
Wide Band, Low Noise, Amplifier, SOT-343
MRF150
Price: 1-10 USD
module, high order IMD, 30MHz, 150 Watts, 17 dB, 125 Vdc, load mismatch
XC4062XLA-09HQ240C
Price: 24-26 USD
XC4000XLA/XV Field Programmable Gate Arrays QFP240
CS4281-CQZ
Price: 4-6 USD
CrystalClear PCI, Audio interface, QFP, 1.0 W, ±50 mA, ±10 mA, Full Duplex Operation
MC68HC16Z1CFC16
Price: 3-5 USD
16-bit control unit, QFP, 8/10-bit ADC
LMG7420PLFC-X
Price: 1-100 USD
LCD Display, 240 128 DOTS, Transmissive mode, 6.5V supply voltage, Black on white STN TYPE
DS21Q552
Price: 64.5-66 USD
BGA256, Low Power, 5V, CMOS, Low Power, transceiver, Multi-Chip Module
LM4040A30IDBZR
Price: 0.01-10 USD
2-pin fixed-output device, 45mA current , low dynamic impedance
CY7C1049B-15VC
Price: 0.1-100 USD
36-BSOJ, high-performance, CMOS static RAM, 12 ns, 1320 mW, 2.75 mW, TTL-compatible inputs
