MFG:STO426/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: STO426/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS...
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing.
Product availability:
BUK7107-40ATC in SOT426 (D2-PAK)
BUK7907-40ATC in SOT263B (TO-220AB).
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) |
- |
40 |
V | |
|
VDGS |
drain-gate voltage (DC) | IDG = 250 A |
- |
40 |
V |
|
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
|
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
140 |
A |
|
- |
75 |
A | |||
| Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
S | ||
|
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
560 |
A |
|
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
272 |
W |
|
IDG(CL) |
drain-gate clamping current | tp = 5 ms; = 0.01 | - | 50 | |
|
IGS(CL) |
gate-source clamping current | continuous | - | 10 | |
| tp = 5 ms; = 0.01 | - | 50 | |||
|
Visol(FET-TSD) |
FET to temperature sense diode isolation voltage | - | ±100 | ||
|
Tstg |
storage temperature |
-55 |
+175 |
°C | |
|
Tj |
junction temperature |
-55 |
+175 |
°C | |
|
Source-drain diode | |||||
|
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
140 |
A |
|
- |
75 |
A | |||
|
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
560 |
A |
|
Clamping | |||||
|
EDS(CL)S |
non-repetitive drain-source clamping energy | unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 10 K; starting Tmb = 25 °C |
- |
1.4 |
J |
| Electrostatic Discharge | |||||
|
Vesd |
electrostatic discharge voltage; pins 1,3,5 | Human Body Model; C = 100 pF; R = 1.5 k |
6 |
KV | |
BUK7107-40ATC
PDF/DataSheet Download
MOSFET N-CH 40V 75A D2PAK
MOSFET N-CH 40V 75A D2PAK
N-channel enhancement mode field-effect power transistor BUK7105-40AIE in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.
N-channel enhancement mode field-effect power transistor BUK71/7907-55AIEin a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. BUK71/7907-55AIE availability...
N-channel enhancement mode field-effect power transistor BUK6213-30Ain a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
The BUK6212-40C is designed as one kind of intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and so...
Price: 0.001-5 USD
high frequency, wound chip coil, SMD, 150 ±5% nH, 0.02 to 0.06 ohm, 900 to 1900mA
Price: 0.015-0.02 USD
medium Power, BC337-40, small signal NPN transistor, SGS, TO-92
Price: 10-50 USD
Drive IC , 2.7 V ~ 5.5 V Supply Voltage, TSOP32
Price: 35-39.5 USD
Half-bridge, IGBT INT-A-PAK, MODULE, Generation 4 IGBT technology, Very low conduction, Industry s...
Price: 0.8-0.95 USD
high-linearity analog optocoupler, SOP-8, Low gain temperature coefficient, 1414V
Price: 0.65-5.5 USD
video capture device, QFP, -0.5 to +4.6 V
Price: 1.5-1.9 USD
CM2670A, TQFP, California Micro Devices Corp, Integrated Circuits
Price: 52-60 USD
MODULE, 100~1800 Vrrm, 20~160 Amps Output, 3 phase bridge, UL Recognized
Price: 0.8-2 USD
4 Mbit, 5.0 volt-only Flash memory, TSOP, 200 mA, AM29F040B-70EC
Price: 10-20 USD
8-Bit CMOS Flash Microcontroller, High endurance, Dual Clock Operation, TSSOP-48, 2.7V to 5.5V
Price: 0.1-5 USD
cool MOS power transistor, 650V, 47A, TO-247, SPW47N60C3
Price: 0.8-0.94 USD
silicon N-Channel MOS FET, TO-220F, 14A, 120V, 20W, Low drive current
