MFG:STO426/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: STO426/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ t...
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring both very low on-state resistance, and diode for temperature sensing.
Product availability: BUK7107-55ATE in SOT426 (D2-PAK).
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) |
- |
55 |
V | |
|
VDGS |
drain-gate voltage (DC) | IDG = 250A |
- |
55 |
V |
|
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
|
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
120 |
A |
|
- |
75 |
A | |||
| Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
S | ||
|
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
560 |
A |
|
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
272 |
W |
|
IDG(CL) |
drain-gate clamping current | tp = 5 ms; = 0.01 |
- |
50 |
mA |
|
IGS(CL) |
gate-source clamping current | continuous |
- |
10 |
mA |
| tp = 5 ms; = 0.01 |
- |
50 |
mA | ||
|
Visol(FET-TSD) |
FET to temperature sense diode isolation voltage |
- |
±100 |
V | |
|
Tstg |
storage temperature |
-55 |
+175 |
°C | |
|
Tj |
junction temperature |
-55 |
+175 |
°C | |
|
Source-drain diode | |||||
|
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
140 |
A |
|
- |
75 |
A | |||
|
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
560 |
A |
|
Avalanche ruggedness | |||||
|
EDS(AL)S |
non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 68 A; VDS 55 V; VGS = 10 V; RGS =50 ; starting Tmb = 25 °C |
- |
460 |
J |
| Electrostatic Discharge | |||||
|
Vesd |
electrostatic discharge voltage; pins 1,3,5 | Human Body Model; C = 100 pF; R = 1.5 k |
6 |
KV | |
BUK7107-55ATE
PDF/DataSheet Download
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