BUK7907-40ATC

MOSFET TRENCHPLUS MOSFET

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BUK7907-40ATC Picture
SeekIC No. : 00162748 Detail

BUK7907-40ATC: MOSFET TRENCHPLUS MOSFET

floor Price/Ceiling Price

Part Number:
BUK7907-40ATC
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220
Packaging : Rail
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

· Integrated temperature sensor
· Q101 compliant
· ESD and overvoltage protection
· RDSon = 5.8 mW (typ).



Application

· Variable Valve Timing for engines 
· Electrical Power Assisted Steering.



Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)  
-
40
V
VDGS
drain-gate voltage (DC) IDG = 250 A
-
40
V
VGS
gate-source voltage (DC)  
-
±20
V
ID
drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
140
A
-
75
A
    Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
S
IDM
drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
560
A
Ptot
total power dissipation Tmb = 25 °C; Figure 1
-
272
W
IDG(CL)
drain-gate clamping current tp = 5 ms; = 0.01 - 50  
IGS(CL)
gate-source clamping current continuous - 10  
tp = 5 ms; = 0.01 - 50  
Visol(FET-TSD)
FET to temperature sense diode isolation voltage   - ±100  
Tstg
storage temperature  
-55
+175
°C
Tj
junction temperature  
-55
+175
°C
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25 °C
-
140
A
-
75
A
IDRM
pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
560
A
Clamping
EDS(CL)S
non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 10 K; starting Tmb = 25 °C
-
1.4
J
Electrostatic Discharge
Vesd
electrostatic discharge voltage; pins 1,3,5 Human Body Model; C = 100 pF; R = 1.5 k  
6
KV
[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.



Description

N-channel enhancement mode field-effect power transistor BUK7907-40ATC in a plastic package using  TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing.

Product availability:
BUK7107-40ATC in SOT426 (D2-PAK)
BUK7907-40ATC in SOT263B (TO-220AB).




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