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BUK7909-75AIE

MOSFET TRENCHPLUS MOSFET

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SeekIC No. : 00161098 Detail

BUK7909-75AIE: MOSFET TRENCHPLUS MOSFET

BUK7909-75AIE Data Sheet

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Part Number:
BUK7909-75AIE
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-220
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

 · Integrated current sensor 
 · Q101 compliant
 · ESD protection 
 · Standard level compatible.


Application

 · Variable Valve Timing for engines 
 · Electrical Power Assisted Steering.


Pinout

Connection Diagram




Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC)  
-
75
V
VDGS
 drain-gate voltage (DC)  
-
75
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
120
A
-
75
A
    Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
S
IDM
 drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
480
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
272
W
IGS(CL)
 gate-source clamping current continuous
-
10
mA
tp = 5 ms; = 0.01
-
50
mA
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IDR
 reverse drain current (DC) Tmb = 25 °C
-
120
A
-
75
A
IDRM
 pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
480
A
Clamping
EDS(AL)S
 non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 75 A; VDS 75 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 °C
-
739
mJ
Electrostatic Discharge
Vesd
 electrostatic discharge voltage; all pins Human Body Model; C = 100 pF; R = 1.5 k
-
6
KV
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK7909-75AIE in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.

Product availability:
BUK7109-75AIE in SOT426 (D2-PAK)
BUK7909-75AIE in SOT263B (TO-220AB).




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