Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Gate-Source Breakdown Voltage
: +/- 10 V
Resistance Drain-Source RDS (on)
: 0.013 Ohms
Continuous Drain Current
: 73 A
Packaging
: Rail
Features: TrenchMOS™ technology
Q101 compliant
175 °C rated
Logic level compatible.ApplicationAutomotive and general purpose power switching:
- 12 V and 24 V loads
- Motors, lamps and solenoids.Pinout
Specifications
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
|
− |
55 |
V |
| VDGR |
drain-gate voltage (DC) |
RGS =20kΩ |
− |
55 |
V |
| VGS |
gate-source voltage (DC) |
|
− |
±10 |
V |
| VGSM |
non-repetitive gate-source voltage |
tp 50 µs |
− |
±15 |
V |
| ID |
drain current (DC) |
Tmb =25 °C; VGS =5V; |
− |
73 |
A |
| Tmb = 100 °C; VGS =5V; |
− |
52 |
A |
| IDM |
peak drain current |
Tmb =25 °C; pulsed; tp 10 µs; |
− |
266 |
A |
| Ptot |
total power dissipation |
Tmb =25 °C; |
− |
149 |
W |
| Tstg |
storage temperature |
|
−55 |
+175 |
°C |
| Tj |
operating junction temperature |
|
−55 |
+175 |
°C |
| Source-drain diode |
| IDR |
reverse drain current (DC) |
Tmb =25 °C |
− |
73 |
A |
| IDRM |
pulsed reverse drain current |
Tmb =25 °C; pulsed; tp 10 µs |
− |
266 |
A |
| Avalanche ruggedness |
| WDSS |
non-repetitive avalanche energy |
unclamped inductive load; ID =73A; VDS 55 V; VGS =5V; RGS =50 Ω; starting Tmb =25 °C |
− |
230 |
mJ |
DescriptionN-channel enhancement mode field-effect power transistor BUK9514-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9514-55A in SOT78 (TO-220AB)
BUK9614-55A in SOT404 (D 2-PAK).
BUK9514-55A Data Sheet
