BUK9520-55,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 52A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Drain to Source Voltage (Vdss): 55V
Power - Max: 116W
Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 5V


Parameters:

Technical/Catalog Information	BUK9520-55,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	20 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds	2400pF @ 25V
Power - Max	116W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUK9520 55,127 BUK952055,127