BUK9575-100A

MOSFET RAIL PWR-MOS

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SeekIC No. : 00160803 Detail

BUK9575-100A: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
BUK9575-100A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.072 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 23 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.072 Ohms


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 100 V
VDGR Drain-gate voltage RGS = 20 k - 100 V
±VGS Gate-source voltage - - 15 V
ID Drain current (DC) Tmb = 25 °C - 23 A
ID Drain current (DC) Tmb = 100 °C - 16 A
IDM Drain current (pulse peak value) Tmb = 25 °C - 91 A
Ptot Total power dissipation Tmb = 25 °C - 98 W
Tstg, Tj Storage & operating temperature - - 55 175 °C



Description

N-channel enhancement mode logic level field-effect power transistor BUK9575-100A in a plastic envelope available in TO220AB and SOT404 . Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.


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