BUK9575-100A

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 23 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.072 Ohms


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	Drain-source voltage	-	-	100	V
VDGR	Drain-gate voltage	RGS = 20 k	-	100	V
±VGS	Gate-source voltage	-	-	15	V
ID	Drain current (DC)	Tmb = 25 °C	-	23	A
ID	Drain current (DC)	Tmb = 100 °C	-	16	A
IDM	Drain current (pulse peak value)	Tmb = 25 °C	-	91	A
Ptot	Total power dissipation	Tmb = 25 °C	-	98	W
Tstg, Tj	Storage & operating temperature	-	- 55	175	°C

Description

N-channel enhancement mode logic level field-effect power transistor BUK9575-100A in a plastic envelope available in TO220AB and SOT404 . Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.