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Part Number: BUK96-55B

 

 

 

 

Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Perfo...


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BUK96-55B General Description


N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.

BUK96-55B Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC)     55 V
VDGR drain-gate voltage (DC) RGS = 20 kW   55 V
VGS gate-source voltage (DC)     ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3   146 A
  75 A
Tmb = 100 ; VGS = 5 V; Figure 2   75 A
IDM peak drain current Tmb = 25 ; pulsed; tp  10 ms; Figure 3   587 A
Ptot total power dissipation Tmb = 25 ; Figure 1   258 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175

BUK96-55B Features

* TrenchMOS™ technology
* 175  rated
* Q101 compliant
* Logic level compatible.

BUK96-55B Typical Application

* Automotive systems
* Motors, lamps and solenoids
* 12 V and 24 V loads
* General purpose power switching.

BUK96-55B Connection Diagram

BUK96-55B Connection Diagram

BUK96-55B datasheet

BUK 456-800A
PDF/DataSheet Download

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