MFG:SOT404/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: SOT404/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Perfo...
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK952R8-30B in SOT78 (TO-220AB)
BUK962R8-30B in SOT404 (D2-PAK).
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) |
- |
30 |
V | |
|
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
30 |
V |
|
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
|
ID |
drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 |
- |
237 |
A |
|
- |
75 |
A | |||
| Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
A | ||
|
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
950 |
A |
|
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
300 |
W |
|
Tstg |
storage temperature |
-55 |
+175 |
°C | |
|
Tj |
junction temperature |
-55 |
+175 |
°C | |
|
Source-drain diode | |||||
|
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
237 |
A |
|
- |
75 |
A | |||
|
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
950 |
A |
|
Avalanche ruggedness | |||||
|
EDS(AL)S |
non-repetitive drain-source clamping energy |
unclamped inductive load; ID = 75 A; VDS 30 V; VGS = 5 V; RGS = 50 k; starting Tmb = 25 °C |
- |
2.3 |
mJ |
BUK962R8-30B
PDF/DataSheet Download
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