Purchase BUK9635-55, In-stock BUK9635-55 From SeekIC.
MFG:PHIL D/C:05+
Part Number: BUK9635-55
MFG: PHIL
D/C: 05+
Description: N-channel enhancement mode logiclevel field-effect power transistor in a
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BUK9635-55
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DataSheet
General Description
BUK9635-55 General Description
N-channel enhancement mode logiclevel field-effect power transistor in aplastic envelope suitable for surfacemounting. Using 'trench' technologythe device features very low on-stateresistance and has integral zenerdiodes giving ESD protection up to2kV. It is intended for use inautomotive and general purposeswitching applications.
BUK9635-55 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | - | - | 55 | V |
| VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
| ±VGS | Gate-source voltage | - | - | 10 | V |
| ID | Drain current (DC) | Tmb = 25 | - | 34 | A |
| ID | Drain current (DC) | Tmb = 100 | - | 24 | A |
| IDM | Drain current (pulse peak value) | Tmb = 25 | - | 136 | A |
| Ptot | Total power dissipation | Tmb = 25 | - | 85 | W |
| TstgTj | Storage & operating temperature | - | -55 | 175 |
BUK9635-55 Typical Application
·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
BUK9635-55
PDF/DataSheet Download
- Datasheet: BUK9635-55
- File Size: 71218 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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