MFG:ST Package Cooled:TO-220 D/C:07+
MFG: ST
Package Cooled: TO-220
D/C: 07+
Description: The device is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium v...
The device is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
| Symbol | Parameter | Value | Unit |
| VCES | Collector-Emitter Voltage (VBE= 0) | 700 | V |
| VCEO | Collector-Emitter Voltage (IB= 0) |
400 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
| IC | Collector Current | 4 | A |
| ICM | Collector Peak Current (tP<5 ms) | 8 | A |
| IB | Base Current | 2 | A |
| IBM | Base Peak Current (tP<5 ms) | 4 | A |
| Ptot | Total Dissipation at Tc = 25 | 70 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
*STMicroelectronicsPREFERRED SALESTYPE
*NPN RANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE
BUL128D-B
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