BUL128D-B

TRANS NPN HV FAST 400V TO-220

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SeekIC No. : 003436286 Detail

BUL128D-B: TRANS NPN HV FAST 400V TO-220

floor Price/Ceiling Price

US $ .17~.5 / Piece | Get Latest Price
Part Number:
BUL128D-B
Mfg:
Supply Ability:
5000

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  • Unit Price
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  • $.17
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: STMicroelectronics
Transistor Type: NPN Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V Resistor - Base (R1) (Ohms): -
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A Current - Collector Cutoff (Max): 250µA
Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Series : ESD5V0S Power - Max: 70W
Frequency - Transition: - Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220AB
Manufacturer: STMicroelectronics
Current - Collector Cutoff (Max): 250µA
Power - Max: 70W
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V


Features:

*STMicroelectronicsPREFERRED  SALESTYPE
*NPN RANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE




Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS



Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 700 V
VCEO Collector-Emitter Voltage (IB= 0)
400 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 4 A
ICM Collector Peak Current (tP<5 ms) 8 A
IB Base Current 2 A
IBM Base Peak Current (tP<5 ms) 4 A
Ptot Total Dissipation at Tc = 25 70 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

BUL128D-B is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BUL128D-B uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

BUL128D-B is designed for use in lighting applications and low cost switch-mode power supplies.





Parameters:

Technical/Catalog InformationBUL128D-B
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)4A
Power - Max70W
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 2.5A
Frequency - Transition-
Current - Collector Cutoff (Max)250A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUL128D B
BUL128DB



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