BUL49D

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 10
Collector- Emitter Voltage VCEO Max : 450 V


Features:

*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED HIGHRUGGEDNESS


Application

*ELECTRONICTRANSFORMERSFOR HALOGENLAMPS
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	850	V
VCEO	Collector-Emitter Voltage (IB= 0)	450	V
VEBO	Emitter-Base Voltage (IC = 0)	BVEBO	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP<5 ms)	10	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	80	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL49D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

The BUL49D is designed for use in electronic transformers for halogen lamps.