BULD118D-1

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 400V
Packaging: Tube
Manufacturer: STMicroelectronics
Current - Collector Cutoff (Max): 250µA
Power - Max: 20W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: TO-251


Features:

*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED


Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	2	A
ICM	Collector Peak Current (tP<5 ms)	4	A
IB	Base Current	1	A
IBM	Base Peak Current (tP<5 ms)	2	A
Ptot	Total Dissipation at Tc = 25	20	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULD118D-1 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULD118D-1 uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

BULD118D-1 is designed fo ruse in lighting applications and low costs witch-modepower supplies.