BULK128D

Features:

*SGS-THOMSONPREFERREDSALESTYPE
*ORDERINGCODES:BULK128D-AAND BULK128D-B
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED


Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	55	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULK128D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULK128D uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BULK128D is designed for use in lighting applications and low costs witch-modepower supplies.