BULK128D-B

Typical Input Resistor :
Typical Resistor Ratio :
Configuration :
Maximum Operating Frequency :
Continuous Collector Current :
Peak DC Collector Current :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : SOT-82
Collector- Emitter Voltage VCEO Max : 400 V
Power Dissipation : 55000 mW


Features:

· STMicroelectronics PREFERRED SALESTYPE
· INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
· VERY HIGH SWITCHING SPEED


Application

· ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
· FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE = 0)	700	V
VCEO	Collector-Emitter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms Tj < 150)	BVEBO	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tp < 5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tp < 5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	55	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULK128D-B is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULK128D-B uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BULK128D-B is designed for use in lighting applications and low cost switch-mode power supplies.