BUX98A

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 450 V
Package / Case : TO-3
Maximum DC Collector Current : 30 A


Specifications

VCER	Collector Emitter Voltage(RBE 10)	850	1000
VCES	Collector Emitter Voltage (VBE = 0)	850	1000
VCEO	Collector Emitter Voltage	400	450
VEBO	Emitter Base Voltage(Ic = 0)	7V
IC	Collector Current	30A
ICM	Collector Peak Current(tp =5 ms)	60A
ICP	Collector Peak Current non Rep (tp = 20s)	80A
IB	Base Current	8A
IBM	Base Peak Current(tp=5 ms)	30A
Ptot	Total Power Dissipation at Tcase < 25	250W
Tstg	Storage Temperature	-65 to 150
Tj	Junction Temperature	200

Description

The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistors in JEDEC TO-3 metal-case intended and industrial applications from single and three-phase mains operation.