Transistors Bipolar (BJT) NPN High Volt Power
BUX98A: Transistors Bipolar (BJT) NPN High Volt Power
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 30 A |
| Configuration : | Single | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-3 |
| Packaging : | Tube |
| VCER | Collector Emitter Voltage(RBE 10) | 850 | 1000 |
| VCES | Collector Emitter Voltage (VBE = 0) | 850 | 1000 |
| VCEO | Collector Emitter Voltage | 400 | 450 |
| VEBO | Emitter Base Voltage(Ic = 0) | 7V | |
| IC | Collector Current | 30A | |
| ICM | Collector Peak Current(tp =5 ms) | 60A | |
| ICP | Collector Peak Current non Rep (tp = 20s) | 80A | |
| IB | Base Current | 8A | |
| IBM | Base Peak Current(tp=5 ms) | 30A | |
| Ptot | Total Power Dissipation at Tcase < 25 | 250W | |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Junction Temperature | 200 | |
The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistors in JEDEC TO-3 metal-case intended and industrial applications from single and three-phase mains operation.