BUX98APW

Transistors Bipolar (BJT) NPN High Volt Power LTB 9-2009

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SeekIC No. : 00210598 Detail

BUX98APW: Transistors Bipolar (BJT) NPN High Volt Power LTB 9-2009

floor Price/Ceiling Price

Part Number:
BUX98APW
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 24 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-247
Packaging : Tube    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Package / Case : TO-247
Collector- Emitter Voltage VCEO Max : 450 V
Maximum DC Collector Current : 24 A


Features:

· STMicroelectronics PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· HIGH CURRENT CAPABILITY
· FAST SWITCHING SPEED



Application

· HIGH FREQUENCY AND EFFICENCY CONVERTERS
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT



Specifications

Symbol
Parameter
Value
Unit
VCER
Collector-Emitter Voltage (RBE = 10
1000
V
VCES
Collector-Base Voltage (VBE = 0)
1000
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
24
A
ICM
Collector Peak Current (tp < 5 ms)
36
A
IB
Base Current
5
A
IBM
Base Peak Current
8
A
Ptot
Total Power Dissipation at Tcase < 25
200
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The BUX98APW is a silicon Multiepitaxial Mesa NPN transistor in TO-247 plastic package. It is intended for use in industrial applications from single and three-phase mains operation.




Parameters:

Technical/Catalog InformationBUX98APW
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)24A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic1.2V @ 3.2A, 16A
Frequency - Transition-
Current - Collector Cutoff (Max)2mA
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUX98APW
BUX98APW
497 2575 5 ND
49725755ND
497-2575-5



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