BUX98AP

DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 450 V
Package / Case : TO-218
Maximum DC Collector Current : 24 A


Features:

·SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· HIGH CURRENT CAPABILITY
· FAST SWITCHING SPEED

·SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· HIGH CURRENT CAPABILITY
· FAST SWITCHING SPEED

Application

· HIGH FREQUENCY AND EFFICENCY CONVERTERS
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

· HIGH FREQUENCY AND EFFICENCY CONVERTERS
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

Specifications

Symbol	Parameter	Value	Unit
VCER	Collector-Emitter Voltage (RBE = 10 )	1000	V
VCES	Collector-Emitter Voltage (VBE=0)	1000	V
VCEO	emitter-base voltage(IB = 0)	450	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector Current	24	A
ICM	Collector Peak Current (tP < 5 ms)	36	A
IB	Base Current	5	A
IBM	Base Peak Current (tP < 5 ms)	8	A
Ptot	Total Dissipation at Tcase < 25 °C	200	W
Tj	Storage Temperature	-65 to 150	°C
Tstg	Max. Operating Junction Temperature	150	°C

Symbol	Parameter	Value	Unit
VCER	Collector-Emitter Voltage (RBE = 10 )	1000	V
VCES	Collector-Emitter Voltage (VBE=0)	1000	V
VCEO	emitter-base voltage(IB = 0)	450	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector Current	24	A
ICM	Collector Peak Current (tP < 5 ms)	36	A
IB	Base Current	5	A
IBM	Base Peak Current (tP < 5 ms)	8	A
Ptot	Total Dissipation at Tcase < 25 °C	200	W
Tj	Storage Temperature	-65 to 150	°C
Tstg	Max. Operating Junction Temperature	150	°C

Description

The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial applications from single and three-phase mains operation.

The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package,intended for use in industrial applications from single and three-phase mains operation..

Features of the BUX98AP are:(1)sgs-thomson preferred salestype;(2)npn transistor;(3)high voltage capability;(4)high current capability;(5)fast switching speed.

The absolute maximum ratings of the BUX98AP can be summarized as:(1):the symbol is VCER,the parameter is collector-emitter voltage(RBE = 10),the value is 1000,the unit is V;(2):the symbol is VCES,the parameter is collector-base voltage(VBE =0),the value is 1000,the unit is V;(3):the symbol is VCEO,the parameter is collector-emitter voltage(IB = 0),the value is 450,the unit is V;(4):the symbol is VEBO,the parameter is emitter-base voltage(IC = 0),the value is 7,the unit is V;(5):the symbol is IC,the parameter is collector current,the value is 24,the unit is A;(6):the symbol is ICM,the parameter is collector peak current(tp < 5 ms),the value is 36,the unit is A;(7):the symbol is IB,the parameter is base current,the value is 5,the unit is A;(8):the symbol is IBM,the parameter is base peak current (tp < 5 ms),the value is 8,the unit is A;(9):the symbol is Ptot,the parameter is total power dissipation at tcase < 25 ,the value is 200,the unit is W;(10):the symbol is Tstg,the parameter is storage temperature,the value is -65 to 150,the unit is ;(11):the symbol is Tj,the parameter is Max operating junction temperature,the value is 150,the unit is .