Purchase BUZ101, In-stock BUZ101 From SeekIC.
MFG:SIEMENS Package Cooled:TO-220 D/C:08+
- Table of contents:
BUZ101
-
Suppliers
DataSheet
General Description
BUZ101 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 31 |
ID | 29 | A |
| Pulsed drain current TC = 25 |
IDpuls | 16 | |
| Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 |
EAS |
70 |
mJ |
| Reverse diode dv/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 100 | W |
| Operating temperature | Tj | -55 ... + 175 | |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, chip case | RthJC | 1.5 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
BUZ101 Features
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175 operating temperature
• also in TO-220 SMD available
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175 operating temperature
• also in TO-220 SMD available
BUZ101
PDF/DataSheet Download
- Datasheet: BUZ101
- File Size: 189550 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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