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MFG:SIE D/C:07+

MFG:SIE D/C:07+

| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 23 °C |
ID | 42 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 168 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 180 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 200 |
W |
| Operating temperature | Tj | -55 ... + 175 | °C |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, chip case | RthJC | 0.83 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
BUZ102
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