Purchase BUZ102AL, In-stock BUZ102AL From SeekIC.
MFG:SIEMENS Package Cooled:TO-220 D/C:08+
- Table of contents:
BUZ102AL
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Suppliers
DataSheet
General Description
BUZ102AL Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 100 °C |
ID | 42 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 168 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 180 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 14 | V |
| Gate-source peak voltage,aperiodic | Vgs | ± 20 | |
| Power dissipation TC = 25 °C |
Ptot | 200 |
W |
BUZ102AL
PDF/DataSheet Download
- Datasheet: BUZ102AL
- File Size: 187272 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BUZ10
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
- 135632 KB
- ·BUZ100
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
- 190453 KB
- ·BUZ100L
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
- 191198 KB
- ·BUZ100S
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
- 129031 KB
- ·BUZ100S-4
- Infineon
- SIPMOS ? Power Transistor
- 92674 KB
- ·BUZ100SL
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
- 126220 KB
- ·BUZ100SL-4
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
- 91749 KB
- ·BUZ101
- SIEMENS [Siemens Semiconductor Group]
- SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
- 189550 KB
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