Purchase BUZ102S, In-stock BUZ102S From SeekIC.
MFG:TEM Package Cooled:TO-220AB D/C:97
- Table of contents:
BUZ102S
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Suppliers
DataSheet
General Description
BUZ102S Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 52 37 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 208 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 245 |
mJ |
| Avalanche current,limited by Tjmax | IAR | 52 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 12 | mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 120 |
W |
BUZ102S
PDF/DataSheet Download
- Datasheet: BUZ102S
- File Size: 126051 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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