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- Table of contents:
BUZ102SL
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Suppliers
DataSheet
General Description
BUZ102SL Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 25 TC = 100 |
ID | 47 33 |
A |
| Pulsed drain current TC = 25 |
IDpuls | 188 | |
| Avalanche energy, single pulse ID = 47 A, VDD = 25 V, RGS = 25 L = 222 H, Tj = 25 |
EAS | 245 | mJ |
| Avalanche current,limited by Tjmax | IAR | 47 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 12 | mJ |
| Reverse diode dv/dt IS = 47 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ± 14 | V |
| Power dissipation TC = 25 |
Ptot | 120 | W |
BUZ102SL Features
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175 operating temperature
• also in SMD available
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175 operating temperature
• also in SMD available
BUZ102SL
PDF/DataSheet Download
- Datasheet: BUZ102SL
- File Size: 123680 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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