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BUZ103S
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DataSheet
General Description
BUZ103S Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 31 22 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 124 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 140 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 75 |
W |
BUZ103S
PDF/DataSheet Download
- Datasheet: BUZ103S
- File Size: 124432 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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