Purchase BUZ103SL-4, In-stock BUZ103SL-4 From SeekIC.
- Table of contents:
BUZ103SL-4
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Suppliers
DataSheet
General Description
BUZ103SL-4 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current one channel active TA = 25 |
ID | 4.8 | A |
| Pulsed drain current one channel active TA= 25 |
IDpuls | 19.2 | |
| Avalanche energy, single pulse ID =4.8A, VDD = 25 V, RGS = 25 L =12mH, Tj = 25 |
EAS | 140 | mJ |
| Reverse diode dv/dt IS =4.8 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ± 14 | V |
| Power dissipation ,one channel active TA = 25 |
Ptot | 2.4 | W |
| Operating temperature | Tj | -55 ... + 175 | |
| Storage temperature | Tstg | -55 ... + 175 | |
| IEC climatic category, DIN IEC 68-1 | 55 / 175/ 56 |
BUZ103SL-4 Features
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
BUZ103SL-4
PDF/DataSheet Download
- Datasheet: BUZ103SL-4
- File Size: 110412 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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