Purchase BUZ10S2, In-stock BUZ10S2 From SeekIC.
MFG:SIEMENS/INF/ST Package Cooled:TO-220 D/C:06+
- Table of contents:
BUZ10S2
-
Suppliers
DataSheet
General Description
BUZ10S2 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =26 |
ID | 23 | A |
| Pulsed drain current TC = 25 |
IDpuls | 92 | |
| Avalanche current,limited by Tjmax | IAR | 23 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
1.3 |
mJ |
|
Avalanche energy, single pulse |
EAS | 8 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 75 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
BUZ10S2 Features
• N channel
• Enhancement mode
• Avalanche-rated
• Enhancement mode
• Avalanche-rated
BUZ10S2
PDF/DataSheet Download
- Datasheet: BUZ10S2
- File Size: 135482 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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