Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =29 ID 30 A Pulsed drain currentTC = 25 IDpuls 120 Avalanche current,limited by Tjmax IAR 30 Avalanche energy,periodic limite...
BUZ11S2: Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =29 ID 30 A Pulsed drain currentTC =...
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| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =29 |
ID | 30 | A |
| Pulsed drain current TC = 25 |
IDpuls | 120 | |
| Avalanche current,limited by Tjmax | IAR | 30 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
1.9 |
mJ |
|
Avalanche energy, single pulse |
EAS | 14 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 75 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |