CD4007C

Features:

`Wide supply voltage range.... 3.0V to 15V
`High noise immunity ......0.45 V_CC (typ.)


Specifications

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

Voltage at Any Pin .........V_SS -0.3V to V_DD +0.3V
Operating Temperature Range
CD4007M.................. -55 to +125
CD4007C ...............  ...-40 to +85
Storage Temperature Range -........65 to +150
Power Dissipation (P_D)
Dual-In-Line ................ ....700 mW
Small Outline ....................500 mW
Operating VDD Range........ V_SS +3.0V to V_SS +15V
Lead Temperature
(Soldering, 10 seconds)................ 260


Description

The CD4007M/CD4007C consists of three complementary pairs of N- and P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to V_DD and V_SS.

For proper operation the voltages CD4007C at all pins must be constrained to be between V_SS - 0.3V and V_DD a+0.3V at all times.