CHA2092b

Features:

·Broadband performances : 18-32GHz
·2.5dB Noise Figure
·10dBm output power ( -1dB gain comp. )
·22dB ±1.0dB gain
·Low DC power consumption, 60mA @ 3.5V
·Chip size : 1.67 X 0.97 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.0	V
Id	Drain bias current	120	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing technique is implemented on chip to ease the circuit biasing.

CHA2092b is manufactured with a P-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2092b is available in chip form.