CHA2097a

Features:

·Broadband performances : 20-40GHz
·14dBm output power ( 1dB gain comp. )
·18dB ±1.5dB gain
·10dB gain control range.
·Low DC power consumption, 140mA @ 3.5V
·Chip size : 2.04 X 0.97 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4.0	V
Id	Drain bias current	200	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA2097a is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2097 is available in chip form.