Features: • Radiation Hardened to 10K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)• Dose Rate Survivability: >1 x 1012 RAD (Si)/s• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse̶...
CMM5104: Features: • Radiation Hardened to 10K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)• Dose Ra...
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The CMM5104 is a high reliability 4096 word by 1-bit static random access memory using CMOS/SOS technology. It is designed for use in memory systems where low power and simplicity in use are desirable.
CMOS/SOS technology permits operation in radiation environments. CMM5104 is insensitive to neutrons, cannot latch up at any dose rate and is resistant to single event upset caused by cosmic rays or heavy ions.
CMM5104 TTL compatibility on all input and output terminals permits easy system integration. The data out signal has the same polarity as the input data. A separate data input and a separate Three-state output are used.
The CMM5104 is supplied in 18 lead dual-in-line sidebrazed ceramic package (D suffix). CMM5104 is also available in a 24 lead flatpack ceramic package (K suffix).