Features: • Radiation Hardened to 10K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)• Dose Rate Survivability: >1 x 1012 RAD (Si)/s• Dose Rate Upset >1010 RAD (Si)/s 20ns PulseR...
CMM5114A: Features: • Radiation Hardened to 10K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)• Dose R...
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The CMM5114A is a high reliability 1024 word by 4-bit static random access memory using CMOS/SOS technology. It is designed for use in memory systems where low power and simplicity in use are desirable. TTL compatibility on all I/O terminals permits easy system integration.
CMOS/SOS technology CMM5114A permits operation in radiation environments.
CMM5114A is insensitive to neutrons, cannot latch up at any dose rate and is resistance to single event upset caused by cosmic rays or heavy ions.